Microstructural and electrical characteristics of rapidly annealed Ni/Mo Schottky rectifiers on cleaned n-type GaN (0001) surfaceJYOTHI, I; RAJAGOPAL REDDY, V; CHOI, Chel-Jong et al.Journal of materials science. Materials in electronics. 2011, Vol 22, Num 3, pp 286-291, issn 0957-4522, 6 p.Article

Effects of the Physical Properties of Bismate Frits on Contact Formation Between Ag Electrodes and Si Emitter in Si Solar CellsKIM, Dongsun; CHOI, Chel-Jong; KIM, Hyungsun et al.Journal of electronic materials. 2013, Vol 42, Num 4, pp 639-645, issn 0361-5235, 7 p.Article

Electrical and microstructural properties of low-resistance Ti/Re/Au ohmic contacts to n-type GaNRAJAGOPAL REDDY, V; CHOI, Chel-Jong.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 10, pp 3392-3397, issn 1862-6300, 6 p.Article

Growth of height-controlled InGaN quantum dots on GaNPARK, Il-Kyu; PARK, Seong-Ju; CHOI, Chel-Jong et al.Journal of crystal growth. 2010, Vol 312, Num 14, pp 2065-2068, issn 0022-0248, 4 p.Article

Electrical properties and interfacial reactions of rapidly annealed Ni/Ru Schottky rectifiers on n-type GaNSIVA PRATAP REDDY, M; RAJAGOPAL REDDY, V; CHOI, Chel-Jong et al.Journal of alloys and compounds. 2010, Vol 503, Num 1, pp 186-191, issn 0925-8388, 6 p.Article

Electrical and structural properties of low-resistance Pt/Ag/Au ohmic contacts to p-type GaNRAJAGOPAL REDDY, V; RAMESHA REDDY, N; CHOI, Chel-Jong et al.Solid-state electronics. 2005, Vol 49, Num 7, pp 1213-1216, issn 0038-1101, 4 p.Article

The effect of annealing temperature on electrical and structural properties of Rh/Au schottky contacts to n-type GaNRAJAGOPAL REDDY, V; RAMESHA REDDY, N; CHOI, Chel-Jong et al.Semiconductor science and technology. 2006, Vol 21, Num 12, pp 1753-1757, issn 0268-1242, 5 p.Article

Structural and electrical properties of Mo/n-GaN schottky diodesRAJAGOPAL REDDY, V; RAMESH, C. K; CHOI, Chel-Jong et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 3, pp 622-627, issn 1862-6300, 6 p.Article

Microstructural properties of thermally stable Ti/W/Au ohmic contacts on n-type GaNRAMESHA REDDY, N; RAJAGOPAL REDDY, V; CHOI, Chel-Jong et al.Microelectronic engineering. 2006, Vol 83, Num 10, pp 1981-1985, issn 0167-9317, 5 p.Article

Electrical, structural and morphological characteristics of rapidly annealed Ni/Pd Schottky rectifiers on n-type GaNSIVA PRATAP REDDY, M; RAJAGOPAL REDDY, V; JYOTHI, I et al.Surface and interface analysis. 2011, Vol 43, Num 9, pp 1251-1256, issn 0142-2421, 6 p.Article

Schottky Barrier N-Type Thin Film Transistors With Polycrystalline Silicon Channel and Er-Silicided Metallic JunctionsSHIN, Jin-Wook; CHOI, Chel-Jong; JANG, Moongyu et al.IEEE electron device letters. 2008, Vol 29, Num 12, pp 1336-1339, issn 0741-3106, 4 p.Article

Ni implantation-induced enhancement of the crystallisation of amorphous SiOK, Young-Woo; SEONG, Tae-Yeon; CHOI, Chel-Jong et al.Journal of materials science. Materials in electronics. 2006, Vol 17, Num 12, pp 979-985, issn 0957-4522, 7 p.Article

Carrier transport mechanism of Se/n-type Si Schottky diodesJANARDHANAM, V; PARK, Yang-Kyu; AHN, Kwang-Soon et al.Journal of alloys and compounds. 2012, Vol 534, pp 37-41, issn 0925-8388, 5 p.Article

Conduction Mechanism of Se Schottky Contact to n-Type GeJANARDHANAM, V; PARK, Yang-Kyu; YUN, Hyung-Joong et al.IEEE electron device letters. 2012, Vol 33, Num 7, pp 949-951, issn 0741-3106, 3 p.Article

Electrical and structural properties of Pd/V/n-type InP (111) Schottky structure as a function of annealing temperatureSANKAR NAIK, S; RAJAGOPAL REDDY, V; CHOI, Chel-Jong et al.Surface and interface analysis. 2012, Vol 44, Num 1, pp 98-104, issn 0142-2421, 7 p.Article

Analysis of Transconductance (g_m) in Schottky-Barrier MOSFETsCHOI, Sung-Jin; CHOI, Chel-Jong; KIM, Jee-Yeon et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 2, pp 427-432, issn 0018-9383, 6 p.Article

Effects of thermal annealing on the electrical and structural properties of Pt/Mo Schottky contacts on n-type GaNVARRA RAJAGOPAL REDDY; RAVINANDAN, M; KOTESWARA RAO, P et al.Journal of materials science. Materials in electronics. 2009, Vol 20, Num 10, pp 1018-1025, issn 0957-4522, 8 p.Article

Electrical and structural properties of rapidly annealed Pd/Mo Schottky contacts on n-type GaNRAJAGOPAL REDDY, V; RAVINANDAN, M; KOTESWARA RAO, P et al.Semiconductor science and technology. 2008, Vol 23, Num 9, issn 0268-1242, 095026.1-095026.7Article

Formation of thermally stable Ni monosilicide using an inductively coupled plasma processOK, Young-Woo; CHOI, Chel-Jong; MAENG, Jeong-Tae et al.Journal of electronic materials. 2004, Vol 33, Num 8, pp 916-922, issn 0361-5235, 7 p.Article

Effect of annealing temperature on electrical properties of Au/polyvinyl alcohol/n-InP Schottky barrier structureRAJAGOPAL REDDY, V; SIVA PRATAP REDDY, M; ASHOK KUMAR, A et al.Thin solid films. 2012, Vol 520, Num 17, pp 5715-5721, issn 0040-6090, 7 p.Article

New approach to the growth of SiO_x nanowire bunch using Au catalyst and SiN_x film on Si substratePARK, Nae-Man; PARK, Hyun-Kyu; CHOI, Chel-Jong et al.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 10, pp 3170-3172, issn 1386-9477, 3 p.Article

Electronic parameters and carrier transport mechanism of high-barrier Se Schottky contacts to n-type GaNRAJAGOPAL REDDY, V; JANARDHANAM, V; JU, Jin-Woo et al.Solid state communications. 2014, Vol 179, pp 34-38, issn 0038-1098, 5 p.Article

Influence of annealing on structural and electrical properties of double metal structure Ru/Cu contacts on n-type InPLAKSHMI DEVI, V; JYOTHI, I; RAJAGOPAL REDDY, V et al.Physica status solidi. A, Applications and materials science (Print). 2012, Vol 209, Num 1, pp 105-112, issn 1862-6300, 8 p.Article

Structural and electrical properties of radio frequency magnetron sputtered tantalum oxide films: Influence of post-deposition annealingJAGADEESH CHANDRA, S. V; CHOI, Chel-Jong; UTHANNA, S et al.Materials science in semiconductor processing. 2010, Vol 13, Num 4, pp 245-251, issn 1369-8001, 7 p.Article

Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxyOK, Young-Woo; CHOI, Chel-Jong; SEONG, Tae-Yeon et al.Journal of electronic materials. 2001, Vol 30, Num 7, pp 900-906, issn 0361-5235Article